Non-stationary electronic processes in barrier structures and devices based on them

  • E. A. Jafarova Institute of Physics of ANAS, Baku, Azerbaijan
Keywords: p–n junction, deep levels, non-stationary electronic spectroscopy, photocapacitance, transition metals

Abstract

The limits of external influences and conditions (temperature, γ-irradiation) are determined under which the stability of parameters and the concentration of nickel levels are preserved, which is necessary when using nickel as an impurity in microelectronics. Methods are proposed for fabricating a semiconductor switch, a memory cell, and a diode matrix with identical parameters (by U) based on the Al–SiO2–Si–М structure.

Published
2006-02-28
How to Cite
Jafarova, E. A. (2006). Non-stationary electronic processes in barrier structures and devices based on them. Technology and Design in Electronic Equipment, (6), 39-42. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.39
Issue
No. 6 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Jafarova E. A.

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