Growth equipment for production of semi-insulating GaAs by the Czochralski method

  • G. P. Kovtun National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. P. Shcherban’ National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: gallium arsenide single crystals, semi-insulating GaAs, growth methods, Czochralski method with liquid encapsulation, equipment characteristics

Abstract

A brief description and comparison of the liquid-encapsulated Czochralski (LEC) method with other growth techniques is presented, as well as its role in the development of semi-insulating GaAs technology. Information is provided on modern developments in growth equipment for producing large-diameter SI-GaAs crystals by the LEC method. Comparative characteristics of pulling installations of the new and previous generations are given. The tendencies in the development of growth equipment, along with the current state of domestic mechanical engineering and industrial production of gallium arsenide, are described.

Published
2006-02-28
How to Cite
Kovtun, G. P., & Shcherban’, A. P. (2006). Growth equipment for production of semi-insulating GaAs by the Czochralski method. Technology and Design in Electronic Equipment, (6), 3-6. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.03
Issue
No. 6 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Kovtun G. P., Shcherban’ A. P.

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