Formation of T-shaped gates in low-noise microwave field-effect transistor
Keywords:
microwave field-effect transistor, electron-beam lithography, T-shaped gate
Abstract
The process of forming T-shaped gates in low-noise field-effect transistors for millimeter and submillimeter wavelength ranges has been investigated. A technological scheme for gate formation is proposed, based on electron-beam exposure of a three-layer resist structure consisting of two layers of electron resist separated by a thin metal layer. Experimental transistor samples with T-shaped gates have been fabricated, featuring a gate height of 1.1 μm, a bottom part length of 0.15 μm, and a top part length of 0.8–1.0 μm.
Published
2006-10-30
How to Cite
Bosiy, V. I., Korzhinskiy, F. I., Semashko, E. M., Sereda, I. V., Sereda, L. D., & Tkachenko, V. V. (2006). Formation of T-shaped gates in low-noise microwave field-effect transistor. Technology and Design in Electronic Equipment, (5), 18-20. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.18
Section
Articles
Copyright (c) 2006 Bosiy V. I., Korzhinskiy F. I., Semashko E. M., Sereda I. V., Sereda L. D., Tkachenko V. V.
This work is licensed under a Creative Commons Attribution 4.0 International License.
