Physico-technological foundations for obtaining an abrupt p–n junction

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Sh.Sh. Yuldashev Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Sh. Sh. Boltaeva Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: abrupt p–n junction, liquid-phase epitaxy, intermediate layer, solution–melt, cooling

Abstract

A method for obtaining an abrupt p–n junction by liquid-phase epitaxy is presented. It consists in the growth of a thin intermediate p-type layer on a heavily doped p+ substrate, followed by the growth of an n-type layer from a melt cooled at a decreasing rate.

Published
2006-08-31
How to Cite
Karimov, A. V., Yodgorova, D. M., Yuldashev, S., & Boltaeva, S. S. (2006). Physico-technological foundations for obtaining an abrupt p–n junction. Technology and Design in Electronic Equipment, (4), 59-60. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.59
Issue
No. 4 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Karimov A. V., Yodgorova D. M., Yuldashev Sh.Sh., Boltaeva Sh. Sh.

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