Silicon thermostabilized p–i–n photodiode

  • Yu. G. Dobrovolsky SPF «Tensor», Chernivtsy, Ukraine
Keywords: photodiode, silicon, thermostabilization, thermoelectric module, dark current, noise current

Abstract

A design of a silicon p–i–n photodiode crystal thermostabilized by a Peltier thermoelectric module is proposed and investigated. It is shown that such a design allows the noise current density to remain practically unchanged within the temperature range of 20–85 °C.

Published
2006-08-31
How to Cite
Dobrovolsky, Y. G. (2006). Silicon thermostabilized p–i–n photodiode. Technology and Design in Electronic Equipment, (4), 39-41. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.39
Issue
No. 4 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Dobrovolsky Yu. G.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.