Investigation of the impurity photoeffect in two-barrier p–n–m structures

Abstract

The spectral photosensitivity and current transport mechanisms in two-barrier p(Al_0,08Ga_0,82)In_0,1As-nGaAs:О-Au structures at room temperature have been investigated. It is shown that, depending on the operating mode, both tunnel-injection and generation-injection currents occur. The studied two-sided photosensitive structure, which remains functional under either polarity of the applied voltage, is of interest for the detection and processing of optical signals in the visible (λ = 0.5–0.9 μm, λ = 0.9–1.0 μm) and near-infrared (λ = 1.0–1.4 μm, λ = 1.4–1.6 μm) spectral ranges, which are promising for optoelectronic applications.