Influence of plasma-chemical etching on the surface structure of silicon wafers for photovoltaic converters

Abstract

The results of plasma-chemical etching (PCE) of the surface of photovoltaic converter (PVC) wafers, pre-structured by chemical etching, are presented. PCE was carried out in a plasma-chemical reactor using a mixture of sulfur hexafluoride (SF₆) and 10% oxygen. Mass spectrometry demonstrated high efficiency of working gas utilization in the reactor. Electron microscopy studies revealed varying degrees of surface structure modification depending on etching time. As a result of short-term treatment of the silicon wafer surface, its interaction with light is enhanced — the short-circuit current increases by 5.5%, and the efficiency of the PVC rises from 12% to 13%.