Photoelectric parameters of SnS₂–ₓSeₓ–InSe heterojunctions (0 ≤ x ≤ 1)

  • V. N. Katerinchuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • M. Z. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: SnS₂, SnSe₂, InSe, heterojunction, photoelectric parameters

Abstract

Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x > 0) or as an inversion conductivity mode (x = 0). The dependence of forward current on voltage in the heterojunctions corresponds to that of diodes with ideal characteristics. The obtained heterojunctions can be used as photodetectors.

Published
2006-04-30
How to Cite
Katerinchuk, V. N., & Kovalyuk, M. Z. (2006). Photoelectric parameters of SnS₂–ₓSeₓ–InSe heterojunctions (0 ≤ x ≤ 1). Technology and Design in Electronic Equipment, (2), 41-42. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.41
Issue
No. 2 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Katerinchuk V. N., Kovalyuk M. Z.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.