Study of photoelectric characteristics of a microphoto terminal

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • U. M. Buzrukov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • M. A. Mirdjalilova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Sh. Sh. Boltaeva Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: photodiode–diode structure, photosensitivity, photogalvanic, photoreceptive mode

Abstract

The results of a study of the photoelectric characteristics of a microphoto terminal consisting of a photodiode–diode structure with oppositely connected photo- and dark diodes are presented. It is shown that in the photogalvanic mode its parameters undergo insignificant changes, while in the photoreceptive mode it exhibits high photosensitivity. The proposed design of the elements is of interest for switching several photoelectric structures with minimal losses.

Published
2006-04-30
How to Cite
Karimov, A. V., Yodgorova, D. M., Buzrukov, U. M., Mirdjalilova, M. A., & Boltaeva, S. S. (2006). Study of photoelectric characteristics of a microphoto terminal. Technology and Design in Electronic Equipment, (2), 32-35. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.32
Issue
No. 2 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Karimov A. V., Yodgorova D. M., Buzrukov U. M., Mirdjalilova M. A., Boltaeva Sh. Sh.

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This work is licensed under a Creative Commons Attribution 4.0 International License.