Complex-doped InP/InGaAsP epitaxial structures for optoelectronics

  • S. I. Krukovsky SPA «Karat», Lviv, Ukraine
Keywords: complex doping, epitaxial structures, rare-earth elements, optoelectronics

Abstract

The influence of complex doping with rare-earth elements (Yb, Gd) and aluminum on the electrophysical properties of InGaAsP layers grown by liquid-phase epitaxy has been studied. Using a technological approach based on complex doping, InP/InGaAsP epitaxial structures for photodetectors were obtained. On the basis of these structures, mesa photodiodes were fabricated with an active area of 0.3·10–2 cm² and dark currents not exceeding 10–9 A at 300 K.

Published
2026-04-10
How to Cite
Krukovsky, S. I. (2026). Complex-doped InP/InGaAsP epitaxial structures for optoelectronics. Technology and Design in Electronic Equipment, (2), 27-31. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.27
Issue
No. 2 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Krukovsky S. I.

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