Technological prerequisites for the creation of MOS structures with small design rules

Abstract

Physico-technological limitations in the formation of various types of solid-state MOS structures within silicon VLSI and LSI are considered. The possibilities of improving their manufacturability are shown, based on self-aligned processes for forming thin-film structures, including the use of solid-phase reactions of refractory transition metals with silicon under isothermal and pulsed thermal treatments, as well as the creation of DMOS transistors with a vertical structure, which are promising for high-power semiconductor devices.