Technology for producing palladium silicide films for high-power Schottky diodes

  • L. P. Anufriev Business Park "Transistor", Minsk, Belarus
  • V. V. Baranov Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
  • J. A. Solovjov Business Park "Transistor", Minsk, Belarus
  • M. V. Tarasikov Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
Keywords: Schottky diodes, palladium silicide, thermal evaporation, current–voltage characteristics

Abstract

A technology is proposed for forming transition layers of palladium silicide through a solid-phase reaction of a palladium film with a silicon substrate directly during deposition, without the need for subsequent thermal treatment. Studies of the elemental composition and crystalline structure of the obtained silicide layers have been carried out, and the barrier height to n-type silicon has been measured. The possibility of using the resulting palladium silicide layers for the fabrication of high-power Schottky diodes has been demonstrated.

Published
2005-08-30
How to Cite
Anufriev, L. P., Baranov, V. V., Solovjov, J. A., & Tarasikov, M. V. (2005). Technology for producing palladium silicide films for high-power Schottky diodes. Technology and Design in Electronic Equipment, (4), 55-56. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.55
Issue
No. 4 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Anufriev L. P., Baranov V. V., Solovjov J. A., Tarasikov M. V.

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