Fabrication of nanostructured AlN and ZnO films and their application in electronic engineering

  • A. F. Belyanin Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • M. I. Samoylovich Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • K. A. Kovalskiy Lomonosov Moscow State University, Russia
  • K. Yu. Petukhov Lomonosov Moscow State University, Russia
Keywords: nanomaterials, magnetron sputtering, layered structures, acoustic and emission electronics

Abstract

The design features of the sputtering system in a magnetron sputtering installation and the conditions for forming AlN and ZnO films with controlled composition and crystalline phase structure are considered. The conditions for obtaining and the operational characteristics of layered structures including AlN, ZnO, diamond, and diamond-like carbon layers are demonstrated in their application to acoustic and emission electronics.

 
Published
2005-08-30
How to Cite
Belyanin, A. F., Samoylovich, M. I., Kovalskiy, K. A., & Petukhov, K. Y. (2005). Fabrication of nanostructured AlN and ZnO films and their application in electronic engineering. Technology and Design in Electronic Equipment, (4), 46-54. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.46
Issue
No. 4 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 A. F. Belyanin., M. I. Samoylovich, K. A. Kovalskiy, K. Yu. Petukhov

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