Optical signal detectors based on Au–nSi–Al and Au–nSi structures

Abstract

Au–nSi–Al structures with oppositely connected rectifying junctions and Au–nSi structures with protective high-resistance layers overlapping the metal have been obtained. It is shown that the photosensitivity of the Au–nSi–Al structure in the short-wavelength region is nearly an order of magnitude higher than in the visible spectral region. The creation of an active layer from a higher-resistance near-surface region in the Au–nSi structure, along with the expansion of the spectral range, enhances its photosensitivity. The obtained structures are of interest for optical signal detection.