Capacitance properties of MIS structures HgCdTe/SiO2/Si3N4

  • A. V. Voitsekhovskii Siberian Physical-Technical Institute, Tomsk, Russia
  • S. N. Nesmelov Siberian Physical-Technical Institute, Tomsk, Russia
  • N. A. Kulchitskii MIREA, Moscow, Russia
Keywords: MIS structures, HgCdTe, capacitance–voltage characteristics, variband layers

Abstract

The capacitance–voltage characteristics of n(p)-HgCdTe/SiO2/Si3N4 and n(p)-HgCdTe/anodic oxide film MIS structures have been experimentally investigated at different frequencies and voltage sweep directions. Specific features of electrophysical characteristics have been identified, associated with the bulk resistance of the epitaxial film and the presence of near-surface variband layers. It has been shown that the use of a two-layer dielectric SiO2/Si3N4 is promising for surface passivation of matrix HgCdTe photodiodes for the infrared range.

 

Published
2005-08-30
How to Cite
Voitsekhovskii, A. V., Nesmelov, S. N., & Kulchitskii, N. A. (2005). Capacitance properties of MIS structures HgCdTe/SiO2/Si3N4. Technology and Design in Electronic Equipment, (4), 35-38. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.4.35
Issue
No. 4 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 A. V. Voitsekhovskii, S. N. Nesmelov, N. A. Kulchitskii

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