Low-current Gunn diodes based on gallium arsenide for millimeter-wave devices

  • A. G. Yatsunenko Institute of Technical Mechanics NASU and SSAU, Dnepropetrovsk, Ukraine
  • V. M. Kovtonyk Research Institute «Orion», Kyiv, Ukraine
  • V. N. Ivanov Research Institute «Orion», Kyiv, Ukraine
  • Yu. E. Nikolaenko Research Institute «Orion», Kyiv, Ukraine
Keywords: gallium arsenide, cathode contact, Schottky barrier, Gunn diode, generator module, millimeter-wave devices, millimeter-wave therapy, RAMED EXPERT

Abstract

A hardware implementation of multichannel domestic millimeter-wave therapy devices based on Gunn diodes operating in the frequency ranges of 42–53 GHz and 56–65 GHz with operating currents below 120 mA has been carried out. New technologies for forming a cathode contact with limited injection of majority carriers from AuGe–TiB2–Au allow the fabrication of diodes with a conversion efficiency of DC voltage into microwave oscillations exceeding 2% and a maximum output power up to 10 mW. This makes it possible to significantly improve the performance characteristics of millimeter-wave equipment and expand its functional capabilities.

Published
2005-06-30
How to Cite
Yatsunenko, A. G., Kovtonyk, V. M., Ivanov, V. N., & Nikolaenko, Y. E. (2005). Low-current Gunn diodes based on gallium arsenide for millimeter-wave devices. Technology and Design in Electronic Equipment, (3), 46-48. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.46
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 A. G. Yatsunenko, V. M. Kovtonyk, V. N. Ivanov, Yu. E. Nikolaenko

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