Formation of GaTe/CdSe heterostructures for use in solar cells

Abstract

The issue of replacing cadmium chalcogenides in solar cell structures is considered. The process of cadmium selenide epitaxy on a layered GaTe substrate has been investigated. It is shown that this process is accompanied by reactive interaction of the components, subsequent diffusion of gallium atoms from the substrate to the surface, and the formation of Ga-Se bonds relative to the bulk Ga-Te and epitaxial Cd-Se components of the photoelectron spectrum.