Technological approaches to improving the thermal regime of GaAs crystal growth by the Czochralski method

  • G. P. Kovtun National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. I. Kravchenko National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. I. Kondrik National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. P. Shcherban' National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. I. Kondrik National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: gallium arsenide, single crystals, Czochralski method, computer modeling, thermal field

Abstract

For the Czochralski method with liquid encapsulation of the melt and an additional heater immersed in the flux, the dependence of the temperature gradient G near the crystallization front in GaAs crystals on the heater power, its distance from the crystal, as well as on the conditions of thermal shielding of the crystal and flux at different ratios of heat flows through the bottom and wall of the crucible has been studied. The conditions under which the best results are achieved (taking into account the values of G and the uniformity of their radial distribution) are demonstrated.

Published
2004-12-30
How to Cite
Kovtun, G. P., Kravchenko, A. I., Kondrik, A. I., Shcherban’, A. P., & Kondrik, A. I. (2004). Technological approaches to improving the thermal regime of GaAs crystal growth by the Czochralski method. Technology and Design in Electronic Equipment, (6), 3-6. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.6.03
Issue
No. 6 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Kovtun G. P., Kravchenko A. I., Kondrik A. I., Shcherban' A. P.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.