Micronegatrone pressure converter based on a silicon MOS structure

Abstract

The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with the reduction of the semiconductor band gap width. A negatron circuit is proposed that converts pressure into frequency.