Development of the design and manufacturing technology for Gunn diodes for EHF therapy

Abstract

The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA. The diodes are fabricated from n–n⁺ type GaAs epitaxial structures. The n-layer thickness is 2.4–2.6 μm, and the carrier concentration is (8...9)×10¹⁵ cm^–3. A multilayer Ge–Au–TiB₂–Au contact was used as the cathode. The formation of an ohmic contact on the surface of the n-layer creates a heterogeneity that promotes the formation of a domain at this location.