Optimization of the geometric characteristics of p–n structures for optoelectronics

  • I. М. Vikulin Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • V. I. Irkha Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • B. V. Korobitsyn Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • V. E. Gorbachev Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
Keywords: LED, photodiode, tuning, efficiency

Abstract

This paper discusses the relationship between the optimal geometric characteristics and the electroluminescence spectra of p-n structures for their use as light-emitting diodes or photodetectors. The possibility of using the electroluminescence of p-n structures for their fine-tuning during the fabrication of photodetectors is considered. The application of the discovered dependencies is demonstrated using the example of gallium arsenide p-n structures.

Published
2004-06-30
How to Cite
VikulinI. М., Irkha, V. I., Korobitsyn, B. V., & Gorbachev, V. E. (2004). Optimization of the geometric characteristics of p–n structures for optoelectronics. Technology and Design in Electronic Equipment, (3), 38-39. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.38
Issue
No. 3 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Vikulin I. М., Irkha V. I., Korobitsyn B. V., Gorbachev V. E.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.