Semiconductor heterojunctions of oxide-InSe(GaSe) for photoelectric analyzers of polarized radiation

  • Z. D. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. M. Katerynchuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: photopleochroism, GaSe, InSe, heterojunction

Abstract

The phenomenon of photopleochroism in oxide–p-InSe and n+-In₂O₃–p-GaSe heterojunctions was investigated over a wide spectral range. Maximum values of the photopleochroism coefficient (reaching 65% in In₂O₃-GaSe and — 40%) were obtained for the edge absorption of light by the crystals, which coincides with the emission wavelengths of red ruby (λ = 0.6328 μm) and infrared neodymium (λ = 1.06 μm) lasers, respectively. The investigated heterojunctions can be used to simplify the detection of the azimuthal orientation of linearly polarized light.

Published
2004-06-30
How to Cite
Kovalyuk, Z. D., & Katerynchuk, V. M. (2004). Semiconductor heterojunctions of oxide-InSe(GaSe) for photoelectric analyzers of polarized radiation. Technology and Design in Electronic Equipment, (3), 7-9. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.07
Issue
No. 3 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Kovalyuk Z. D., Katerynchuk V. M.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.