Switching and memory effects in Al–SiO2–Si MOS structures

  • Z. A. Iskender-zade Azerbaijan Technical University, Baku, Azerbaijan
  • M. R. Akhundov Azerbaijan Technical University, Baku, Azerbaijan
  • E. A. Jafarova Institute of Physics of ANAS, Baku, Azerbaijan
  • Sh. A. Alikhanova Institute of Physics of ANAS, Baku, Azerbaijan
Keywords: MOS structure, switching, memory element, threshold voltage, delay time, deep traps

Abstract

By studying current-voltage characteristics and non-stationary transient processes, the mechanisms of switching and memory effects in Al–SiO2–Si structures have been clarified, as well as the possibility of their practical application in the creation of stable and controllable memory elements.

Published
2004-04-30
How to Cite
Iskender-zade, Z. A., Akhundov, M. R., Jafarova, E. A., & Alikhanova, S. A. (2004). Switching and memory effects in Al–SiO2–Si MOS structures. Technology and Design in Electronic Equipment, (2), 59-61. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.2.59
Issue
No. 2 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Iskender-zade Z. A., Akhundov M. R., Jafarova E. A., Alikhanova Sh. A.

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