CMOS IC master oscillator with quartz frequency stabilization

  • V. I. Zolotarevsky Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • L. I. Samotovka Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • Yu. D. Mazaletsky Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • B. A. Balai Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • E. S. Tovmach Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. F. Voshchinkin Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: block diagram, oscillator, CMOS IC, electrical parameters

Abstract

The paper presents the block diagram and functional diagram of the developed CMOS IC, as well as the electrical circuit of the oscillator itself. A calculation method for the oscillator is provided to establish symmetry of its operating point and achieve high sensitivity to input voltage variations in generation mode. The required symmetry of output signal pulses is ensured. The CMOS IC remains operational after exposure to temperatures ranging from –60 °C to +125 °C. The structural characteristics of the IC are comparable to imported samples.

Published
2003-12-30
How to Cite
Zolotarevsky, V. I., Samotovka, L. I., Mazaletsky, Y. D., Balai, B. A., Tovmach, E. S., & Voshchinkin, A. F. (2003). CMOS IC master oscillator with quartz frequency stabilization. Technology and Design in Electronic Equipment, (6), 53-55. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.53