New generation of ultraviolet radiation photodetectors

  • K. V. Kolezhuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. N. Komashchenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • G. I. Sheremetova V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • F. I. Korzhinsky V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. M. Chmil SPE «Saturn», Kyiv, Ukraine
Keywords: ultraviolet photodetectors, A2B6 wide-band semiconductors, layered heterostructures, spectral response, UV radiation monitoring

Abstract

An experimental batch of selective and broadband ultraviolet radiation sensors of a new generation has been developed and manufactured, based on layered heterostructures in the A2B6 wide-band semiconductor system and their solid solutions. The created sensors have no industrial analogues worldwide. Their main distinguishing feature is insensitivity to visible light without the need for special optical filters to correct the spectral response. They are intended for ultraviolet radiation monitoring.

Published
2003-06-30
How to Cite
Kolezhuk, K. V., Komashchenko, V. N., Sheremetova, G. I., Korzhinsky, F. I., & Chmil, V. M. (2003). New generation of ultraviolet radiation photodetectors. Technology and Design in Electronic Equipment, (3), 51-52. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.51
Issue
No. 3 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Kolezhuk K. V., Komashchenko V. N., Sheremetova G. I., Korzhinsky F. I., Chmil V. M.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.