Explosive crystallization of thin semiconductor films under γ‑ray irradiation

  • E. F. Khramov Odesa National Academy of Telecommunications named after A. S. Popov, Ukraine
  • G. V. Prokhorov V. N. Karazin Kharkov National University, Ukraine
  • N. M. Pelikhaty V. N. Karazin Kharkov National University, Ukraine
  • A. K. Hnap V. N. Karazin Kharkov National University, Ukraine
Keywords: explosive crystallization, thin films, semiconductors, gamma rays, structural microdefects, radiation defect formation, solid‑state electronics

Abstract

Previously undescribed structural microdefects arising in semiconductor films under gamma irradiation have been identified. It is shown that the cause of changes in the optical properties of such films is related to micro‑inhomogeneities and elastic fields around them. Experimental studies of radiation defect formation processes revealed one of the possible reasons for distortion of the electrical signal in layered structures of solid‑state electronic devices.

Published
2003-04-30
How to Cite
Khramov, E. F., Prokhorov, G. V., Pelikhaty, N. M., & Hnap, A. K. (2003). Explosive crystallization of thin semiconductor films under γ‑ray irradiation. Technology and Design in Electronic Equipment, (2), 58-60. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.58
Issue
No. 2 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 E. F. Khramov, G. V. Prokhorov, N. M. Pelikhaty, A. K. Hnap

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.