Calculation of frequency dependence of dielectric characteristics of thin films in the HfO₂—Nd₂O₃ system

  • A. I. Kazakov Odessa National Polytechnic University, Ukraine
  • A. V. Andriyanov Odessa National Polytechnic University, Ukraine
  • V. S. Mironov Odessa National Polytechnic University, Ukraine
  • O. V. Polyarush Odessa National Polytechnic University, Ukraine
Keywords: thin films, HfO₂—Nd₂O₃, dielectric characteristics, electron‑beam evaporation, parameter optimization

Abstract

A calculation methodology is proposed for films of the multicomponent HfO₂—Nd₂O₃ system obtained by electron‑beam evaporation in vacuum, with non‑uniform distribution of components across thickness. The calculated data show good correlation with experimental results, enabling the production of films with specified dielectric characteristics over a wide frequency range. The results were used to optimize parameters of thin‑film emitters with dielectric coatings of the HfO₂—Nd₂O₃ system.

Published
2003-02-28
How to Cite
Kazakov, A. I., Andriyanov, A. V., Mironov, V. S., & Polyarush, O. V. (2003). Calculation of frequency dependence of dielectric characteristics of thin films in the HfO₂—Nd₂O₃ system. Technology and Design in Electronic Equipment, (1), 52-54. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.52
Issue
No. 1 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 A. I. Kazakov, A. V. Andriyanov, V. S. Mironov, O. V. Polyarush

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