Indirect laser heating of polycrystalline silicon to obtain active elements of integrated circuits

  • Z. A. Iskender-zade Azerbaijan Technical University, Baku, Azerbaijan
  • F. D. Kasimov Azerbaijan Technical University, Baku, Azerbaijan
  • S. A. Ismayilova Special Design Bureau of Space Instrumentation, Baku, Azerbaijan
Keywords: indirect laser heating, polycrystalline silicon, recrystallization, single-crystal layers, active elements, integrated circuits, Hall sensors

Abstract

The paper shows that laser recrystallization of polycrystalline silicon films makes it possible to obtain high-quality single-crystal layers, which allows manufacturing functional integrated circuit elements, in particular Hall sensors, within them.

Published
2002-10-30
How to Cite
Iskender-zade, Z. A., Kasimov, F. D., & Ismayilova, S. A. (2002). Indirect laser heating of polycrystalline silicon to obtain active elements of integrated circuits. Technology and Design in Electronic Equipment, (4–5), 40-42. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.4-5.40
Issue
No. 4–5 (2002): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2002 Iskender-zade Z. A., Kasimov F. D., Ismayilova S. A.

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