Prediction of the threshold voltage of GaAs ion-implanted metal-semiconductor field-effect transistors

Abstract

It is shown that the threshold voltage of a GaAs ion-implanted metal–semiconductor field-effect transistor corresponds, with good accuracy, to the voltage at which an inflection point appears in the capacitance–voltage characteristic. A method is proposed for predicting the threshold voltage of ion-implanted field-effect transistors using capacitance–voltage measurements prior to contact formation.