No. 1 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Compensation of parasitic elements of transistor in the class F amplifier with the tuning of impedances at harmonics

  A. P. Yefymovych, V. G. Krizhanovski

  3-13

  • PDF (Українська)
• Microwave energy attenuators of high thermal conductivity based on AlN and SiC with addition of molybdenum

  V. I. Chasnyk, I. P. Fesenko

  11-14

  • PDF (Українська)
• The invariance of current energy fourier spectrum of discrete real signals on finite intervals

  V. A. Ponomarev, O. V. Ponomareva

  15-22

  • PDF (Українська)
• Local trajectory parameters estimation and detection of moving targets in rayleigh noise

  I. G. Prokopenko, V. Iu. Vovk, I. P. Omelchuk, Yu. D. Chirka, K. I. Prokopenko

  23-35

  • PDF
• Development of deep silicon plasma etching for 3D integration technology

  А. А. Golishnikov, M. G. Putrya

  36-41

  • PDF (Українська)
• Nonadhesive acoustic membranes based on polyimide

  A. V. Vorob'ev, V. D. Zhora, K. K. Baklaev, V. P. Grunyanskaya

  42-46

  • PDF (Українська)
• Magnetic and kinetic properties of crystals Hg1–x–yCdxDyySe

  T. T. Kovalyuk, E. V. Maistruk, P. D. Maryanchuk

  47-51

  • PDF (Українська)
• Investigation of metrological parameters of measuring system for small temperature changes

  M. G. Samynina, V. A. Shigimaga

  52-56

  • PDF (Українська)
• All-ukrainian research and design institute of analytical instrumentation “Ukranalyt” celebrates its 45th anniversary

  A. A. Dashkovsky, I. L. Mikhejeva

  57-62

  • PDF (Українська)