Enhancing parameters of silicon varactors using laser gettering

I. M. Vikulin; V. N. Litvinenko; S. V. Shutov; A. I. Maronchuk; A. N. Demenskiy; V. I. Glukhova

doi:10.15222/TKEA2018.2.29

I. M. Vikulin Odessa National Academy of Telecommunications named after A. S. Popov, Odesа, Ukraine https://orcid.org/0000-0003-3887-6676
V. N. Litvinenko Kherson National Technical University, Kherson, Ukraine https://orcid.org/0000-0002-9425-5551
S. V. Shutov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
A. I. Maronchuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
A. N. Demenskiy V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
V. I. Glukhova Kherson National Technical University, Kherson, Ukraine

DOI: https://doi.org/10.15222/TKEA2018.2.29

Keywords: varactor, silicon, impurities, gettering, reverse current

Abstract

The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors. The mechanisms of the laser gettering effect on the parameters of varactors are analyzed.

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