Electrical and photoelectric properties of heterostructures NiO/p-CdTe and NiO/n-CdTe

H. P. Parkhomenko; P. D. Maryanchuk

doi:10.15222/TKEA2016.4-5.29

H. P. Parkhomenko Yurii Fedkovych Chernivtsi National University, Chernivtsy, Ukraine
P. D. Maryanchuk Yurii Fedkovych Chernivtsi National University, Chernivtsy, Ukraine

DOI: https://doi.org/10.15222/TKEA2016.4-5.29

Keywords: heterojunctions, thin film, charge transport mechanisms, NiO, CdTe

Abstract

In this study, we investigate the electrical and photoelectric properties of heterostructures formed by the reactive magnetron sputtering of thin film NiO onto p-CdTe and n-CdTe substrates. The current-voltage characteristics of the heterojunctions were measured at room temperature. The dominating current transport mechanisms through the NiO/n-CdTe and NiO/p-CdTe heterojunctions at the forward biases are generation-recombination and tunnel, at the reverse biases are tunnel current transport mechanisms. The heterojunctions under investigation generate open-circuit voltage U_oc = 0.26 V and short-circuit current I_sc = 58.7 μA/cm² under illumination 80 mW/cm^-2.
The research results can be used for better understanding of the processes occurring in heterojunctions NiO/ n-CdTe and NiO/p-CdTe, to further improve their properties and parameters.

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