Investigation of metrological parameters of sensors based on the pH-sensitive field effect transistors

  • A. L. Kukla V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. V. Lozovoy V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • A. S. Pavluchenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. N. Nagibin V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: ion-selective field effect transistor, pH-FET electrode, pH sensitivity, metrological parameters

Abstract

Primary semiconductor electrodes based on the dual channel pH-sensitive field effect transistors were investigated to characterize their performance both to determine pH value of test solution and to measure sensor responses in differential mode. The simplified three-lead sensor design has been implemented for these purposes. It is shown that such parameters as accuracy, repeatability and stability of developed sensors satisfy necessary requirements for typical laboratory applications.

Published
2013-06-14
How to Cite
Kukla, A. L., Lozovoy, S. V., Pavluchenko, A. S., & Nagibin, S. N. (2013). Investigation of metrological parameters of sensors based on the pH-sensitive field effect transistors. Technology and Design in Electronic Equipment, (2–3), 61-68. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.2-3.61