Manufacturing technology for contacts to silicon carbide

  • Ya. Ya. Kudryk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • R. I. Bigun V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • R. Ya. Kudryk Ivan Franko National University of Lviv, Ukraine
Keywords: ohmic contact, SiC, resistivity

Abstract

The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A set of contacts with better parameters were analysed. From the results of this analysis, some recommendations were made concerning optimal contact-forming layers for p- and n-SiC types of 4H, 6H, 3C, 15R, 21R polytypes.

Published
2013-02-18
How to Cite
Kudryk, Y. Y., Bigun, R. I., & Kudryk, R. Y. (2013). Manufacturing technology for contacts to silicon carbide. Technology and Design in Electronic Equipment, (1), 25-37. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.25
Issue
No. 1 (2013): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2013 Kudryk Ya.Ya., Bigun R. I., Kudryk R. Ya.

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This work is licensed under a Creative Commons Attribution 4.0 International License.