Study on the formation of current characteristics of a silicon photodiode with rectifying barriers

  • A. V. Karimov Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • M. A. Mirdzhalilova Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • G. O. Asanova Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • O. A. Abdulkhaev Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Zh. F. Mukhutdinov Physical-technical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: photodiode structures, Schottky barriers, rectifying junction, two-way sensitivity

Abstract

The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.

Published
2013-02-18
How to Cite
Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Mirdzhalilova, M. A., Asanova, G. O., Abdulkhaev, O. A., & Mukhutdinov, Z. F. (2013). Study on the formation of current characteristics of a silicon photodiode with rectifying barriers. Technology and Design in Electronic Equipment, (1), 9-12. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.09