Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
Keywords:
photodiode structures, Schottky barriers, rectifying junction, two-way sensitivity
Abstract
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.
Published
2013-02-18
How to Cite
Karimov, A. V., Yodgorova, D. M., Giyasova, F. A., Mirdzhalilova, M. A., Asanova, G. O., Abdulkhaev, O. A., & Mukhutdinov, Z. F. (2013). Study on the formation of current characteristics of a silicon photodiode with rectifying barriers. Technology and Design in Electronic Equipment, (1), 9-12. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.09
Section
Articles
Copyright (c) 2013 Karimov A. V., Yodgorova D. M., Giyasova F. A., Mirdzhalilova M. A., Asanova G. O., Abdulkhaev O. A., Mukhutdinov Zh. F.

This work is licensed under a Creative Commons Attribution 4.0 International License.