Characteristics of photodiodes with «intrinsic oxide — InSe» structure, irradiated with high-energy electrons

  • O. N. Sydor I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • O. A. Sydor I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • Z. D. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. I. Dubinko National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Kharkiv, Ukraine
Keywords: layered crystals, indium selenide, photodiode, high-energy electrons, radiation defects

Abstract

The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33–33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure. It has been found that the minimum dose improves their basic parameters, while the maximum dose significantly reduces the short circuit current and devices photosensitivity. In this case, an increase in volt-watt sensitivity and a minimal increase in coupling coefficient of the I-V characteristic are observed.

Published
2012-12-27
How to Cite
Sydor, O. N., Sydor, O. A., Kovalyuk, Z. D., & Dubinko, V. I. (2012). Characteristics of photodiodes with «intrinsic oxide — InSe» structure, irradiated with high-energy electrons. Technology and Design in Electronic Equipment, (6), 29-33. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.6.29
Issue
No. 6 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Sydor O. N., Sydor О. А., Kovalyuk Z. D., Dubinko V. I.

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