Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP

  • S. V. Novitskyi V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: indium phosphide, ohmic contact, dislocation, the specific contact resistance

Abstract

It is experimentally confirmed that the temperature dependence of specific contact resistance of ohmic contacts Au–TiB2–Ge–Au–n–n+–n++-InP is described with the current transport model with a high density of dislocations in the contact region of the semiconductor. The samples used in the experiment were obtained at different annealing temperatures.

Published
2012-08-30
How to Cite
Novitskyi, S. V. (2012). Effect of annealing temperature on the value of contact resistance of ohmic contacts to InP. Technology and Design in Electronic Equipment, (4), 32-34. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.32
Issue
No. 4 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Новицкий С. В.

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