Wide-band chalcogenide scintillators on the basis of AIIBVI compounds

  • N. G. Starzhinskiy Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • B. V. Grinyov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • V. D. Ryzhikov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • Yu. V. Maliykin Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • A. V. Zhukov Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • О. Ts. Sidletskiy Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • I. M. Zenya Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
  • A. I. Lalayants Institute for Scintillation Materials of the NAS of Ukraine, Kharkiv, Ukraine
Keywords: crystals of AIIBVI compounds, zinc sulfide, scintillation characteristics, luminescence centers, chalcogenide scintillators

Abstract

The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26–33), large band gap (Eg=2,8–3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown.

Published
2012-08-30
How to Cite
Starzhinskiy, N. G., Grinyov, B. V., Ryzhikov, V. D., Maliykin, Y. V., Zhukov, A. V., SidletskiyО. T., Zenya, I. M., & Lalayants, A. I. (2012). Wide-band chalcogenide scintillators on the basis of AIIBVI compounds. Technology and Design in Electronic Equipment, (4), 25-28. Retrieved from http://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.25
Issue
No. 4 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Старжинский Н. Г., Гринёв Б. В., Рыжиков В. Д., Малюкин Ю. В., Жуков А. В., Сидлецкий О. Ц., Зеня И. М., Лалаянц А. И.

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