No. 5–6 (2015): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Optimization of complex reliability indicator of wireless devices by changing their topology

  B. M. Uvarov, Yu. F. Zin'kovs'kii

  3-8

  • PDF (Українська)
• Analysis of 19-inch and metric mechanical structures for electronic equipment

  A. A. Yefimenko, A. P. Karlangach

  9-13

  • PDF (Українська)
• Radiometric receiving complex and ways to reduce the radiometric measurements error

  A. M. Pylypenko, I. K. Sunduchkov, V. V. Chmil, V. M. Chmil, P. O. Yatsyk

  14-21

  • PDF (Українська)
• Investigation of bulk acoustic microwaves excited by an interdigital transducer

  O. G. Reshotka, V. G. Hayduchok, N. M. Vakiv

  22-27

  • PDF (Українська)
• Simulating characteristics of Si/Ge tandem monolithic solar cell with Si1-xGex buffer layer Моделирование характеристик тандемного монолитного солнечного элемента Si/Ge с буферным слоем Si1–хGeх

  A. B. Gnilenko, Ju. N. Lavrich, S. V. Plaksin

  28-34

  • PDF (Українська)
• Cooling of led module by various radiators

  A. M. Naumova, Yu. E. Nikolaenko, V. Yu. Kravets, V. M. Sorokin, O. S. Oliinyk

  35-40

  • PDF (Українська)
• Formation of Cu, Ag and Au nanofiims under the influence of hydrogen atoms

  E. L. Zhavzharov, V. M. Matyushin

  41-44

  • PDF (Українська)
• Research on Cu2ZnSnTe4 crystals and heterojunctions based on such crystals

  T. T. Kovaliuk, M. N. Solovan, A. I. Mostovyi, E. V. Maistruk, G. P. Parkhomenko, P. D. Maryanchuk

  45-49

  • PDF (Українська)
• Annealing effect on I-V characteristic of n-ZnO – p-InSe heterojunction

  Z. D. Kovalyuk, V. M. Katerynchuk, Z. R. Kudrynskyi, B. V. Kushnir, V. V. Netyaga, V. V. Khomyak

  50-54

  • PDF (Українська)
• Calculation of characteristics of X-ray devices

  A. N. Orobinskyi

  55-63

  • PDF (Українська)
• Analytical method for determining coordinates of the radiation source in a homogeneous medium

  H. V. Velichko

  64-68

  • PGF (Українська)