UDC 81.411

Increasing the radiation resistance
of single-crystal silicon epitaxial layers

Kurmashev Sh. D., Kulinich O. A., Brusenskaya G. I., Verem’eva A. V.

Keywords: epitaxial silicon, dislocation, radiation defects, defect sink, radiation resistance.

The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 10⁹—10¹² m^–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4). Energy of the particles was 2,3—3,0 MeV, radiation dose 10¹⁵—10²⁰ m^–2, electron beam current 2 mA/m². It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc.).

Ukraine, A. S. Popov Odessa national academy of telecommunications, Odessa national university of economics.