UDC 535.14:621.365.826

Ionization annealing of semiconductor crystals.
Part one: theoretical background

Garkavenko A. S., Mokritskii V. A., Banzak O. V., Zavadskii V. A.

Keywords: laser, annealing, electron beam.

During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Given its theoretical justification, the new annealing type has been called the "ionization annealing".

Ukraine, Odessa National Polytechnic University; A. S. Popov Odessa National Academy of Telecommunications; Odessa National Maritime Academy.