UDC 621.315.592

Sharp interfaces in p⁺-AlGaAs/n-GaAs
epitaxial structures obtained by MOCVD

Vakiv N. M., Krukovskii S. I., Larkin S. Yu., Avksent'ev A. Yu., Krukovskii R. S.

Keywords: epitaxial layer, gallium arsenide, MOCVD, heteroboundary, rare-earth element, doping.

The complexity of forming sharp and high-quality boundaries in p⁺AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualitative hetero boundaries under conditions of continuous growth at changing crystallization temperature from 600—700°C has been developed. It has been determined that the crystallization of p⁺-AlGaAs: Zn solid solution layer on the surface of n-GaAs:Si layer, with increasing the crystallization temperature in the temperature range of 600—760°C at a rate 8—10 °C/min allows to crystallize sharp impurity boundary between the layers of p- and n-type conductivity. The method of forming sharp hetero boundaries in p-GaAs:Zn/n-GaAs:Si systems can be used for manufacturing wide range of epitaxial structures.

Ukraine, Lviv, Scientific and production enterprise subsidiary enterprise "Karat" JSC concern “Electron”; Kiev, Scientific-production concern "Nauka".