UDC 621.315.592 Physical properties and band structure of crystals (3HgTe)1–x(Al2Te3)x, doped with manganese Maryanchuk P. D., Dymko L. N., Romanishyn T. R., Keywords: crystal, magnetic susceptibility, cluster, electric conductivity. This paper presents the results of the analysis of magnetic, optical, kinetic properties and band parameters of (3HgTe)1–x(Al2Te3)x crystals doped by manganese. The behavior of the magnetic susceptibility of the (3HgTe)1–x(Al2Te3)x:<Mn> crystals can be explained by the presence of Mn—Òe—Mn—Òe clusters or, more precisely, by their transition from a magnetically ordered to a paramagnetic state at Curie temperature Tc. The temperature dependences of electrical conductivity are typical for semiconductor materials. This is due to the increase in carrier concentration with the increase of temperature. The temperature dependence of the Hall coefficient indicates that electrons and holes participate in the transport phenomena in the studied samples (the conductivity is mixed). In (3HgTe)1–x(Al2Te3)x: Ukraine, Yuriy Fedkovych Chernivtsi National University. |