UDC 621.382.3

The diamond RF-transistor model

Altukhov A. A., Zyabluk K. N., Mityagin A. Yu., Talipov N. H., Chucheva G. V.

Keywords: field-effect diamond RF-transistor, fluent shutter model, volt-ampere characteristic, maximum power of transistor, gain of the transistor.

In this work is shown that fluent shutter model it is enough well describes work field-effect diamond RF-transistors. Using this model, possible to calculate transistor parameters used electronic parameters of the diamond structure with δ-doped (hydrogen or boron) layer and geometric parameter transistor element. Proof, are calculated by us main parameters model RF-transistor, which it is enough close comply with published experimental result of the measurements real RF-transistors.

Russia, Fryazino, TCP "UralAlmazInvest" Fryazino Branch of Kotel'nikov IRE of RAS.