UDC 537.311.33:622.382.33

Influence of polycrystalline silicon layer
on flow through «metal — p-Si» contact

Smyntyna V. A., Kulinich O. A., Yatsunskii I. R.,
Sviridova O. V., Marchuk I. A.

Keywords: polycrystalline silicon, current transport, "metal — p-Si" contact.

Based on the results of investigations of charge transport in the "metal — p-Si" contacts with different thickness of polycrystalline p-Si layer the mechanisms of charge transport through such structures are shown. It is established that with increasing thickness of the layer of polycrystalline p-Si current transport mechanism changes from a double injection into the drift-diffusion. This change is due to an increase in the drift current component in the space charge zone of "metal — p-Si" contact, which arises as a result of increased surface density of scattering barriers, which are localized at the boundaries of neighboring silicon polycrystals.

Ukraine, Odessa, I. I. Mechnikov Odessa National University.