UDC 621.362:621.383

Investigation of photoluminescence spectrums
of InSb low-dimensional structures formed in GaSb matrix

Andronova E. V., Baganov Ye. A., Kurak V. V.

Keywords: low-dimensional structures, indium antimonide, gallium antimonide, liquid phase epitaxy, photoluminescence spectrum, radiative transition.

Results of investigation of photoluminescence spectrums of the epitaxial structures containing InSb low-dimensional structures formed in GaSb matrix by a method of pulse cooling of saturated solution-melt are presented. It is shown, that observable photoluminescence bands are concerned with radiation transitions through energy levels of InSb low-dimensional structures formed on InSb wetting layer with thickness of 2 nm.

Ukraine, Kherson National Technical University.