UDC 539.1.074.5; 621.382; 621.039.7

Integrated double-sided silicon microstrip detectors

Perevertailo V. L.

Keywords: technology of р⁺-, n⁺-side of the detector, integrated polysilicon resistors, capacitors with double layer dielectric, radiation resistance, coefficient of dose dependence.

The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN) is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

Ukraine, Kiev, Institute of microdevices STC "Institute for single crystals" of NAS of Ukraine.