UDC 621.382.3

Formation of delta-doped p-layer of hydrogen in natural
and CVD-diamond crystals

Altukhov A. A., Afanas’ev M. S., Zyabliuk K. N.,
Mityagin A. Yu., Talipov N. H., Chucheva G. V.

Keywords: diamond, hydrogenation, microwave transistors, Schottky barriers.

A method is proposed for the hydrogen heat treatment of natural and CVD-diamond crystals, which can serve as an alternative to conventional method of forming H-layer in microwave plasma of hydrogen as a simpler one and more reproducible. The boundaries of thermal stability of hydrogenated diamond surface are determined. It is shown that aluminum deposited on hydrogenated during the hydrogen heat treatment diamond surface can serve as a Schottky gate in microwave field-effect transistor made with MESFET technology.

Russia, Moscow, Manufacturing and Technology Center "UralAlmazInvest",
Peter the Great Military Academy of Strategic Rocket Forces; Friazino branch of Kotelnikov IRE RAS.