UDC 621.315.592

Stability to irradiation of SiGe whisker crystals used
for sensors of physical values

Druzhinin A. A., Ostrovskiy I. P., Khoverko Yu. N., Litovchenko P. G.,
Pavlovska N. T., Pavlovskiy Yu. V., Tsmots V. M., Povarchuk V. Yu.

Keywords: whisker, silicon-germanium, gage, gamma irradiation.

An influence of g-irradiation (Co⁶⁰) with doze up to 1—10¹⁸ сm^–2 and magnetic field with induction up to 14 T on conduction of _1–xGe_x (х = 0,03) whisker crystals with resistivity of 0,08—0,025 Оhm·сm in temperature range 4,2—300 K have been studied. It is shown that whisker crystals resistance faintly varies under irradiation with doze 2·10¹⁷ сm^–2, while their magnetoresistance substantially changes. The strain sensors stable to irradiation action operating in high magnetic fields on the base of the whiskers have been designed.

Ukraine, Lvov, NU "Lvovskaya politechnika"; Ivan Franko State Pedagogical University of Drogobych; Kiev, Nuclear Research Institute of NASU; Institute of Physics of NASU.