UDC 621.382.2

The features of temperature dependence of breakdown voltage
in the Au–Ti–n–n⁺-6H–SiC microwave Schottky barrier diodes

Belyaev A. E., Boltovets N. S., Konakova R. V., Krivutsa V. A.,
Kudrik Ya. Ya., Lebedev A. A., Abramov A. P., Lebedev S. P., Milenin V. V.

The article describes the research on temperature dependence of breakdown voltage in silicon carbide Schottky barrier diodes, Au–Ti–n–n⁺-6H–SiC, in the 77—573 K temperature range. It is shown that temperature coefficient of breakdown voltage is negative in the above temperature range. This seems to be caused by the effect of deep levels in the space-charge region on the breakdown.

Ukraine, Kiev, V. Ye. Lashkariov Institute of Physics of Semiconductors of NASU, Scientific Research Institute «Orion»; Russia, St.-Petersburg, A. F. Ioffe Applied-physics Institute.